MJD210 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V

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MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Moun

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www.DataSheet4U.com MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed fo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mou

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UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS  DESCRIPTION The UTC MJD210 is design

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