MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.
MJD44 - NPN DARLINGTON SILICON POWER TRANSISTOR
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • .MJD44 - COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11 MJD45H11 COMPLEMENTARY SILICON PNP TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHI.NJVMJD44E3T4G - Darlington Power Transistor
MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or dr.MJD44E3 - Darlington Power Transistor
MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or dr.MJD44H11T4-A - (MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors
www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat.MJD45H11T4-A - (MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors
www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat.MJD44H11 - Complementary Power Transistors
Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s.MJD44H11A - 8A NPN high power bipolar transistor
MJD44H11A 80 V, 8 A NPN high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor .MJD44H11 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple.MJD44H11 - Complementary Power Transistors
SMD Type Transistors Complementary Power Transistors MJD44H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching.MJD44 - General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
MJD44H11 MJD44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • • • • • .MJD44E3 - NPN DARLINGTON SILICON POWER TRANSISTOR
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • .MJD44E3-1 - NPN DARLINGTON SILICON POWER TRANSISTOR
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • .MJD44E3T4 - NPN DARLINGTON SILICON POWER TRANSISTOR
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • .MJD44H11 - SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *M.MJD44H11 - Complementary power transistors
MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2.MJD44H11 - NPN Epitaxial Silicon Transistor
MJD44H11 — NPN Epitaxial Silicon Transistor April 2015 MJD44H11 NPN Epitaxial Silicon Transistor Features • General-Purpose Power and Switching suc.MJD44H11 - 8A NPN high power bipolar transistor
MJD44H11 80 V, 8 A NPN high power bipolar transistor 27 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor i.MJD44E3 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor MJD44E3 DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Vo.MJD44H11T4 - Low voltage complementary power transistors
MJD44H11T4, MJD45H11T4 Datasheet Low voltage complementary power transistors Features TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter .