TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W

KSE13009L — High Voltage Switch Mode Applications KSE13009L High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Reg

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC=

SEMICONDUCTOR MJE13005A(NPN) RoHS RoHS Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES VCEO(SU

INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D i

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E13005-250 ® Pb Free Plating Product E13005-250 MJE Power Transistor Pb Silicon NPN Power Transistor Product specification MJE13005 series DES

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-volt

HI-SINCERITY MICROELECTRONICS CORP. HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Spec. No. : HA200213 Issued Date : 2002.06.01 R

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(

E13005-225 ® Pb Free Plating Product E13005-225 MJE Power Transistor Pb Silicon NPN Power Transistor DESCRIPTION Product specification MJE13005

www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collecto

MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

isc Silicon PNP Power Transistor MJE15033 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·DC current gain - : hFE = 50 (

MJE13002A APPLICATION: ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT MAXIMUM RATINGS (Tc=25⊥) CHA RA CTERISTIC Co llecto r-Bas e Vo ltag e Co llect

MJE13007A SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGUL