MJE350 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I

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MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated ser

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MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE350/D Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–op

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plasti

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MJE350 MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340

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MJE340 MJE350 Complementary silicon power transistors Features ■ STMicroelectronics preferred salestypes ■ Complementary NPN - PNP devices Applicatio

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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MJE350 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features VCEO， MJE340 .

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