MJE702 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702 DESCRIPTION ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-

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MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRA

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MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designe

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MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designe

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www.DataSheet4U.com MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devi

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MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CE

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80 V ·DC

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