MMBT5088 Datasheet | Specifications & PDF Download

2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R

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Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Vo

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UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for l

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Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5088LT1/D Low Noise Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5088LT1 MMBT5

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ON Semiconductort Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1 MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Collector–E

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UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for l

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SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0

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