MPS-U55-NewJerseySemi Datasheet | Specifications & PDF Download

InterFET Product Folder Technical Support Order Now U553-4-5 U553, U554, U555 Current Regulator Diode Features • InterFET N0016H Geometry • Low

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RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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InterFET Product Folder Technical Support Order Now U556-7 U556, U557 Current Regulator Diode Features • InterFET N0016H Geometry • Low Noise: 5

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MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5593S uses advanced Magn

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InterFET Product Folder Technical Support Order Now U556-7 U556, U557 Current Regulator Diode Features • InterFET N0016H Geometry • Low Noise: 5

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PNP POWER TRANSISTORS COMPLEMENTARY TO THE 2N6716, 17/92GU05, 06 SERIES 92GU55,56 2N6728,29 -60-(-80) VOLTS 2 AMPS, 1.2 WATTS Applications: • High V

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU55P30 P-Channel Power MOSFET DESCRIPTION The CJU55P30 u

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NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers,

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AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Sw

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast

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55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/

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InterFET Product Folder Technical Support Order Now U553-4-5 U553, U554, U555 Current Regulator Diode Features • InterFET N0016H Geometry • Low

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InterFET Product Folder Technical Support Order Now U553-4-5 U553, U554, U555 Current Regulator Diode Features • InterFET N0016H Geometry • Low

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RU55111R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V RDS (ON) =7mΩ(tpy.)@VGS=4.5V • Super High Dense Cell

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www.DataSheet4U.com ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V ID (A)a 55 50 FEATURES • 175 °C Jun

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INTEGRATED CIRCUITS NE5517/NE5517A/AU5517 Dual operational transconductance amplifier Product data Replaces NE5517/NE5517A dated 2001 Aug 03 2002 Dec

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