MPS-U55-NewJerseySemi Datasheet | Specifications & PDF Download

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NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers,

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V ID (A)a 55 50 FEATURES • 175 °C Jun

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www.DataSheet4U.com ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www

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CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

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InterFET Product Folder Technical Support Order Now U556-7 U556, U557 Current Regulator Diode Features • InterFET N0016H Geometry • Low Noise: 5

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SOT143B BFU550X NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon

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InterFET Product Folder Technical Support Order Now U556-7 U556, U557 Current Regulator Diode Features • InterFET N0016H Geometry • Low Noise: 5

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MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5593S uses advanced Magn

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INTEGRATED CIRCUITS NE5517/NE5517A/AU5517 Dual operational transconductance amplifier Product data Replaces NE5517/NE5517A dated 2001 Aug 03 2002 Dec

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RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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627  BFU550W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silic

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast

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