Advanced Power Technology
MRF5812 - Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =
(3 views)
ASI
MRF5812 - NPN Silicon RF Microwave Transistor
MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz
(1 views)
Advanced Power Technology
MRF5812G - Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =
(1 views)