.
STMicroelectronics
4558C - Wide bandwidth dual bipolar operational amplifier
MC4558 Wide bandwidth dual bipolar operational amplifier Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between.
ST Microelectronics
NE555 - General-purpose single bipolar timer
NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr.
STMicroelectronics
2N2219AHR - Hi-Rel NPN bipolar transistor
2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO IC (max) HFE at 10 V - 150 m Operating temperature ran.
Huajing Microelectronics
3DD13009E8 - Silicon NPN bipolar transistor
NPN 3DD13009 E8 ○R 3DD13009 E8 NPN ， ， ， 、 。 ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 12 100 V A W TO-220AB -10℃～40.
Allegro MicroSystems
A1201 - Continuous-Time Bipolar Switch
A1201 Continuous-Time Bipolar Switch FEATURES AND BENEFITS ▪ Continuous-time operation ▫ Fast power-on time ▫ Low noise ▪ Stable operation over f.
STMicroelectronics
NE555N - General-purpose single bipolar timer
NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr.
Huajing Microelectronics
3DD13012AN - Silicon NPN triple diffusion type bipolar transistor
3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -.
Huajing Microelectronics
3DG3020A1-HK - Silicon NPN bipolar transistor
NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0.
ST Microelectronics
STI50DE100 - Hybrid Emitter Switched Bipolar Transistor ESBT
www.DataSheet4U.com STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω Preliminary Data General features VCS(ON) 1..
Huajing Microelectronics
3DD13003D - Silicon NPN bipolar transistor low-frequency amplification
NPN ○R 3DD13003D 1 ： 3DD13003D NPN ，， ，， VCEO 、。 ：TO-126F ， RoHS 。 IC Ptot （TC=25℃） 400 2.5 50 V A W 2 ： TO-126F ● ● ● ● ● 1 2 .
RF Micro Devices
RFPA5026 - class AB Heterojunction Bipolar Transistor (HBT) power amplifier
RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Featu.
SEC
SS3413 - CMOS Omnipolar High Sensitivity Micropower Hall Switch
SS3413 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features − Micropower consumption for battery powered applications − Omnipolar, output s.
Huajing Microelectronics
3DD4508A1 - Silicon NPN bipolar transistor
NPN 3DD4508 A1 ○R 3DD4508 A1 NPN ， ， ， 、 。 ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 450 0.8 0.8 V A W TO-92 -10℃～40℃ 1 .
ST Microelectronics
NE556N - General-purpose dual bipolar timer
NE556 SA556 - SE556 General-purpose dual bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from.
ST Microelectronics
STP08IE120F4 - Emitter Switched Bipolar Transistor
STP08IE120F4 Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω Preliminary Data General features www.DataSheet4U.com VCS(ON) 0.8 V IC.
Melexis Microelectronic Systems
US2881 - Bipolar Hall Switch
US2881 Bipolar Hall Switch – Very High Sensitivity Features and Benefits Wide operating voltage range from 3.5V to 24V Very high magnetic sensitiv.
