Middle-Power Datasheet | Specifications & PDF Download

WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small packa

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2SAR513P5 Middle Power Transistors(-50V / -1A) Parameter VCEO IC Value -50V -1A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=-400mV(Max.)

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RQ3E120BN 　　Nch 30V 21A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 9.3mΩ ±21A 16W lFeatures 1) Low on - resistance 2) High Power Packa

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UNISONIC TECHNOLOGIES CO., LTD UTT9NP03 Preliminary 30V DUAL MIDDLE POWER MOSFET (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UTT9NP03 is a 30V N-

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NotNeRewcDoemsimgennsded for 2SCR586D NPN 5.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 5A lFeatures 1) Suitable for Middle Power D

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www.DataSheet4U.net zhen KYL Communication Equipment Co ., Ltd Shen Shenz Co. KYL-300M RF Data Radio Module Shenzhen KYL Communication Equipment Co

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RQ3E160AD 　　Nch 30V 16A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 4.5mΩ ±16A 2W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection

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RQ3E080GN 　　Nch 30V 18A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 16.7mΩ ±18A 14W lFeatures 1) Low on - resistance. 2) High po

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UT6K3 　　30V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 42mΩ ±5.5A 2W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package

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RQ6C065BC 　　Pch -20V -6.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -20V 21.0mΩ ±6.5A 1.25W lFeatures 1) Low on - resistance. 2) High Power sma

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RQ3E130BN 　　Nch 30V 13A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 6.0mΩ ±13A 2W lFeatures 1) Low on - resistance. 2) High Power Package (HSM

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RQ5E040AJ 　　Nch 30V 4A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 37mΩ ±4.0A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TSMT

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RS3E075AT 　　Pch -30V -7.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 23.5mΩ ±7.5A 2.0W lFeatures 1) Low on - resistance. 2) Small Surface M

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RQ3E100GN 　　Nch 30V 21A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 11.7mΩ ±21A 15W lFeatures 1) Low on - resistance. 2) High po

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QS5W2 Middle Power Transistor (50V / 3A) Parameter VCEO IC 　 Tr1 and Tr2 50V 3A 　 lFeatures 1)Low saturation voltage, typically 　 VCE(sat)=350mV (M

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle Power Transistor Features: 1

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QST8 Middle Power Transistor (-12V /-1.5A) Parameter VCEO IC 　 Tr1 and Tr2 -12V -1.5A 　 lFeatures 1) Collector current is large. 2) Collector satur

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