Middle-Power Datasheet | Specifications & PDF Download

ISSUE NO : Rev: 000 Product Family Data Sheet LM351A - 3535 Middle Power LED Introduction Features  Beam Angle : 120˚  Precondition : JEDEC Level

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features:

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HP8S36 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on

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LN6206 Low Power Low Dropout Middle Current Voltage Regulators ■ General Description The LN6206 series are precise, low power consumption, high volt

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Product Family Data Sheet Rev.2.2 2016.5.24 Middle Power LED Series Flip Chip Package LM101A 1# LM101A opens up a new world of lighting design with

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle Power Transistor Features: 1

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2SCR554P5 Middle Power Transistors (80V / 1.5A) Parameter VCEO IC Value 80V 1.5A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=300mV(Max.)

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2SA2071 Middle Power transistor (-60V, -3A) Parameter VCEO IC Value -60V -3A lFeatures 1)High speed switching. 2)Low saturation voltage. 　(Typ.:-20

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www.DataSheet4U.net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG122 NPN Silicon High Frequency Middle Power T

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3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working f

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QS5W2 Middle Power Transistor (50V / 3A) Parameter VCEO IC 　 Tr1 and Tr2 50V 3A 　 lFeatures 1)Low saturation voltage, typically 　 VCE(sat)=350mV (M

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Product Family Data Sheet Rev.7.0 2016.7.4 Middle Power LED Series 5630 LM561C 1# LM561C is highest performance and lm/W for fluorescent replacement

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WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small packa

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2SAR533P5 Medium Power Transistors(-50V / -3A) Parameter VCEO IC Value -50V -3A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=-400mV(Max.)

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QST8 Middle Power Transistor (-12V /-1.5A) Parameter VCEO IC 　 Tr1 and Tr2 -12V -1.5A 　 lFeatures 1) Collector current is large. 2) Collector satur

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Rev: 007 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features  Beam Angle : 120˚  Precondition : JEDEC Level 2a  Dimensi

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QS8J2 　　-12V Pch + Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 36mΩ ±4A 1.5W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-i

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor F

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