Mitsubishi Electric Semiconduc Datasheet | Specifications & PDF Download

MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current

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MITSUBISHI DIODE MODULES RM15TA-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM15TA-24,-2H DC output current

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MITSUBISHI DIODE MODULES RM30TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM30TA-M,-H DC output current 75A Repetitive pe

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MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H • IF(AV) • VRRM Average forwa

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MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications

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MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 • IF(AV) • VRRM Average forward current

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MITSUBISHI DIODE MODULES RM20TA-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM20TA-24,-2H DC output current

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MITSUBISHI (OPTICAL DEVICES) FU-17SLD-F3M1 FC-CONNECTORIZED MODULE DESCRIPTION FU-17SLD-F3M1 is FC-conne ctorized devices designed to be used with si

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MITSUBISHI DIODE MODULES RM15TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM15TA-M,-H DC output current 30A Repetitive pe

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P ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som IM REL RY INA MITSUBISHI DIODE MODULES R

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P ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som IM REL RY INA MITSUBISHI DIODE MODULES R

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PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver fo

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type

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MITSUBISHI GATE DRIVER FOR GCT THYRISTOR GU-C40 High Power Inverter Use GU-C40 APPLICATION Inverters, Converters, DC choppers, Induction heating, D

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MITSUBISHI Nch POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE FY10AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions

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MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-M,-H • IF(AV) • VRRM Average forward current

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MITSUBISHI DIODE MODULES RM150DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM150DZ/CZ/UZ-M,-H,-24,-2H • IF(AV) • VRRM Average forwa

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