Mitsubishi Electric Semiconductor
RM50TC-M - MEDIUM POWER GENERAL USE INSULATED TYPE
MITSUBISHI DIODE MODULES
RM50TC-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM50TC-M,-H,-24,-2H
• IO • VRRM
DC output current
(17 views)
Mitsubishi Electric Semiconductor
RM15TA-2H - DIODE MODULES
MITSUBISHI DIODE MODULES
RM15TA-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RM15TA-24,-2H
DC output current
(10 views)
Mitsubishi Electric Semiconductor
RM250DZ-2H - Diode-Module
MITSUBISHI DIODE MODULES
RM250DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
RM250DZ/CZ/UZ-M,-H,-24,-2H
• IF(AV) • VRRM
Average forwa
(10 views)
Mitsubishi Electric Semiconductor
RM30TA-H - MEDIUM POWER GENERAL USE INSULATED TYPE
MITSUBISHI DIODE MODULES
RM30TA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM30TA-M,-H
DC output current 75A Repetitive pe
(10 views)
Mitsubishi Electric Semiconductor
FU-17SLD-F3M1 - FC-CONNECTORIZED MODULE
MITSUBISHI (OPTICAL DEVICES)
FU-17SLD-F3M1
FC-CONNECTORIZED MODULE
DESCRIPTION FU-17SLD-F3M1 is FC-conne ctorized devices designed to be used with si
(8 views)
Mitsubishi Electric Semiconductor
2SK2973 - RF POWER MOS FET
MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications
(8 views)
Mitsubishi Electric Semiconductor
RM100D2Z-40 - FAST RECOVERY DIODE MODULE
MITSUBISHI DIODE MODULES
RM100D2Z-40
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RM100D2Z-40
• IF(AV) • VRRM
Average forward current
(8 views)
Mitsubishi Electric Semiconductor
RM15TA-M - DIODE MODULES
MITSUBISHI DIODE MODULES
RM15TA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM15TA-M,-H
DC output current 30A Repetitive pe
(8 views)
Mitsubishi Electric Semiconductor
RM30TPM-H - MEDIUM POWER GENERAL USE INSULATED TYPE
P
ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som
IM REL
RY INA
MITSUBISHI DIODE MODULES
R
(8 views)
Mitsubishi Electric Semiconductor
2SC2538 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR
(7 views)
Mitsubishi Electric Semiconductor
BCR16PM - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions
(7 views)
Mitsubishi Electric Semiconductor
RM20TPM-M - DIODE MODULES
P
ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som
IM REL
RY INA
MITSUBISHI DIODE MODULES
R
(7 views)
Mitsubishi Electric Semiconductor
RM250DZ-M - Diode-Module
MITSUBISHI DIODE MODULES
RM250DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
RM250DZ/CZ/UZ-M,-H,-24,-2H
• IF(AV) • VRRM
Average forwa
(7 views)
Mitsubishi Electric Semiconductor
RM30CZ-24 - Diode-Module
MITSUBISHI DIODE MODULES
RM30DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RM30DZ/CZ-24,-2H
Average forward current
(7 views)
Mitsubishi Electric Semiconductor
RD15HVF1 - Silicon MOSFET Power Transistor
< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W
DESCRIPTION
RD15HVF1 is a MOS FET type
(7 views)
Mitsubishi Electric Semiconductor
2SC1945 - NPN Transistor
(6 views)
Mitsubishi Electric Semiconductor
2SC1971 - NPN Transistor
(6 views)
Mitsubishi Electric Semiconductor
2SC3628 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR
(6 views)
Mitsubishi Electric Semiconductor
FY10AAJ-03A - N-Channel Power MOSFET
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
FY10AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4
(6 views)
Mitsubishi Electric Semiconductor
FU-311SPP-CV3 - InGaAs PD PREAMP MODULE
TZ7-99-407 (2/4)
MITSUBISHI (OPTICAL DEVICES)
FU-311SPP-CV3
InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE
DESCRIPTION FU-311SP
(6 views)