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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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SI-TECH SEMICONDUCTOR CO.,LTD S90N045R/S N-Channel MOSFET Features █ 90V,150A,Rds(on)(typ)=4.5mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100%

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=68V,ID=82A Rds(on)(typ)=6.5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complian

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancemen

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MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON)

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GSMDC3906X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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GN25L95 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring Main Features • 100 mA bias curre

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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand >1.5A Reverse Output Curren

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=100V,ID=155A Rds(on)(typ)=5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complian

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3.3 VOLT HIGH-DENSITY SUPERSYNC™ II 36-BIT FIFO 1,024 x 36, 2,048 x 36 4,096 x 36, 8,192 x 36 16,384 x 36, 32,768 x 36 65,536 x36, 131,072 x 36 IDT7

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HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

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SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features █ 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% A

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=100V,ID=120A Rds(on)(typ)=6.5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compli

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