N40A Datasheet | Specifications & PDF Download

S-19100xxxA Series www.ablic.com © ABLIC Inc., 2012-2020 AUTOMOTIVE, 125°C OPERATION, 10 V VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME

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Silicon N-Channel Power MOSFET CS19N40 A8H ○R General Description： CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Silicon N-Channel Power MOSFET ○R CS10N40 A4R General Description： CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET ○R CS19N40 A8R General Description： VDSS 400 V CS19N40 A8R, the silicon N-channel Enhanced ID 19 A VDMOSFETs,

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NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit

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FGW15N40A Strobe Flash N-Channel Logic Level IGBT August 2005 FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features „ VCE(SAT) = 4.4V at IC=150

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Silicon N-Channel Power MOSFET ○R CS6N40 A3R General Description： CS6N40 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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www.DataSheet4U.com N40A April 1993 40 Lead (0 600 Wide) Molded Dual-in-Line Package NS Package Number N40A All dimensions are in inches (millimet

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N40A ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Stat

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Silicon N-Channel Power MOSFET ○R CS6N40 A4R General Description： CS6N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET ○R CS3N40 ATH General Description： VDSS 400 V CS3N40 ATH, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is

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Silicon N-Channel Power MOSFET ○R CS19N40 ANR General Description： VDSS 400 V CS19N40 ANR, the silicon N-channel Enhanced ID 19 A VDMOSFETs,

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XC31B Series CMOS Temperature Sensor ETR0901_002 ■GENERAL DESCRIPTION The XC31B series are ultra small CMOS temperature sensor ICs. As a bandgap typ

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Silicon N-Channel Power MOSFET ○R CS3N40 A23 General Description： VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free AP0

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Features • Provide Excellent RDS(ON) • Advanced Trench Technology • Low Gate Charge • Lead free product is acquired Application • Load Switch • PWM Ap

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