NDS Datasheet | Specifications & PDF Download

RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Handson Technology Data Specs 17HS4401S 1.7A Torque:43N.cm Stepper Motor A stepper motor to satisfy all your 3D-Printer, robotics, Linear Motion proje

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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，，www.bxwic.com，TEL：0755-83015310，FAX：0755-83015370 ISD1820P 8～20 、 1. ， 0.5uA 2. / 3. （） 4. 3v 、 REC 1 PLAYE 2 PLAYL 3 IC 4 MICREF 5 AGC 6 S

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BB 619 Silicon Variable Capacitance Diode q BB 619 For tuning of extended frequency bands in VHF TV/VTR tuners Type BB 619 Ordering Code (tape an

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HC-SR04 Ultrasonic Sensor Module User Guide: Ultrasonic Sensor V1.0 1 http://www.handsontec.com Table of Contents 1.0 Introduction:

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— http://www.atvoc.com 8-20 -ISD1820 ISD 2001 8～20 ISD1810， ISD1110、1420，CMOS，，，，， FLASH。 、 ： : （1）、， 14 DIP14，ISD1820P； （2）、， 12 COB12， 1810COB；

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® TDA7439 THREE BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER - 4 STEREO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIF

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SHEN ZHEN ELITE CHIP MICROCIRCUIT CO.,LTD EC190708- 09F6-19E7 3 ． ：DC 2.4-5.0V K1， OUT ，，。 3 ，。 3 ，OUT 。 . （VDD=5.0V TA=25℃）

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® TDA7317 FIVE BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER VOLUME CONTROL IN 0.375dB STEP FIVE BANDS STEREO GRAPHIC EQUALIZER CENTER FREQUENCY, BANDW

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www.DataSheet.co.kr ํ๬ᄯฑ̙໩Ԩᆐပຫ٤ഓ Wuxi I-CORE Electronics Co., Ltd. &'   Ѩ῵ᓣഛ఼⬉ ǃὖ CD7388CP ᰃϔ⠛ঠⱘ᭄ᄫৃഛ఼⬉ˈ⫼ CMOS ᎹࠊDŽᅗᦤկ 5 ϡৠⱘ ䷇ડᬜᵰᢽ

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ISD1820 8-20 IC 、 ： 1 2 3 4 5 6 7 DIP14 12PINCOB 14 VSS 13 RECLED 12 FT 11 VCC 10 ROSC 9 SP+ 8 VSSA VSS ROSC SP+ SPAGC MICREF MIC PLAYL PLAYE REC R

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NDS351AN June 2003 NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using

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June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect t

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March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode p

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February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mo

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1. Anode 2. Cathode/ 3. Anode Ca

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NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs Product Specifications Nov 2001 Features • • • • • • •

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Handson Technology User Guide E18-D80NK Adjustable Infra-Red (IR) Proximity Sensor E18-D80NK Infrared Obstacle Avoidance Sensor is a low-cost IR Proxi

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