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NDSH30120CDN SiC Schottky Diode

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode * EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1.Anode 2.Cathode/ 3..
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 110 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* This Device is Halide Free and RoHS Compliant with Ex

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits 12 3 TO
* 247
* 3LD CASE 340CX MARKING DIAGRAM DSH30 120CDN AYWWZZ DSH30120CDN A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMAT

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SiC Schottky Diode ON Semiconductor
ON Semiconductor NDSH30120CDN-like datasheet