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NDSH30120CDN

SiC Schottky Diode

NDSH30120CDN Features

* Max Junction Temperature 175°C

* Avalanche Rated 110 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* This Device is Halide Free and RoHS Compliant with Ex

NDSH30120CDN General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH30120CDN Datasheet (296.91 KB)

Preview of NDSH30120CDN PDF

Datasheet Details

Part number:

NDSH30120CDN

Manufacturer:

ON Semiconductor ↗

File Size:

296.91 KB

Description:

Sic schottky diode.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode

* EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1. Anode 2. Cathode/ 3. .

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NDSH30120CDN SiC Schottky Diode ON Semiconductor

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