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NDSH30120CDN Datasheet - ON Semiconductor

NDSH30120CDN SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH30120CDN Features

* Max Junction Temperature 175°C

* Avalanche Rated 110 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* This Device is Halide Free and RoHS Compliant with Ex

NDSH30120CDN-ONSemiconductor.pdf

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Datasheet Details

Part number:

NDSH30120CDN

Manufacturer:

ON Semiconductor ↗

File Size:

296.91 KB

Description:

Sic schottky diode.

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NDSH30120CDN NDSH30120CDN SiC Schottky Diode ON Semiconductor

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