NDSH30120CDN Datasheet (ON Semiconductor)

NDSH30120CDN, SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the

NDSH30120CDN Features

* Max Junction Temperature 175°C

* Avalanche Rated 110 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* This Device is Halide Free and RoHS Compliant with Ex