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NDSH50120C Silicon Carbide Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 50 A, 1200 V, D3, TO-247-2L NDSH50120C .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175C
* Avalanche Rated 380 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 247
* 2LD CASE 340DA MARKING DIAGRAM DSH 50120C AYWWZZ DSH50120C A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Co

NDSH50120C Distributors

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Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor NDSH50120C-like datasheet