NDSH50120C

Silicon Carbide Schottky Diode

ON Semiconductor

NDSH50120C Features

* Max Junction Temperature 175C

* Avalanche Rated 380 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Halogen Free/BFR Free and are RoHS Compliant Applications

NDSH50120C General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH50120C Datasheet (298.38 KB)

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Datasheet Details

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NDSH50120C

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ON Semiconductor ↗

File Size:

298.38 KB

Description:

Silicon carbide schottky diode.

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NDSH50120C Silicon Carbide Schottky Diode ON Semiconductor

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