NDSH50120C Datasheet (ON Semiconductor) - Silicon Carbide Schottky Diode

NDSH50120C, Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the

NDSH50120C Features

* Max Junction Temperature 175C

* Avalanche Rated 380 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Halogen Free/BFR Free and are RoHS Compliant Applications