NDSH25170A Datasheet (ON Semiconductor) - Silicon Carbide Schottky Diode

NDSH25170A, Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the

NDSH25170A Features

* Max Junction Temperature 175°C

* Avalanche Rated 506 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Halogen Free/BFR Free and are RoHS