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NDSH25170A Silicon Carbide Schottky Diode

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode * EliteSiC, 25 A, 1700 V, D1, TO-247-2L NDSH25170A 1.Cathode 2.Anode Schott.
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 506 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Halogen Free/BFR Free and are RoHS

Applications

* SMPS, Solar Inverter, UPS
* Power Switching Circuits 1 2 TO
* 247
* 2LD CASE 340DA MARKING DIAGRAM AYWWZZ NDSH 25170A A YWW ZZ NDSH25170A = Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and

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Silicon Carbide Schottky Diode ON Semiconductor
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