NDSH10170A

SiC Schottky Diode

ON Semiconductor

NDSH10170A Features

* Max Junction Temperature 175C

* Avalanche Rated 156 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Halogen Free/BFR Free and are RoHS Compliant Applications

NDSH10170A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH10170A Datasheet (298.80 KB)

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Datasheet Details

Part number:

NDSH10170A

Manufacturer:

ON Semiconductor ↗

File Size:

298.80 KB

Description:

Sic schottky diode.

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NDSH10170A SiC Schottky Diode ON Semiconductor

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