NDS0605 - P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology..

0.18A,.
60V. RDS(ON) = 5 Ω @ VGS =.
10 V.
Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON).
High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1).

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