NDS0605 Datasheet - Fairchild

NDS0605 P-Channel Enhancement Mode Field Effect Transistor

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, wit.

NDS0605 Features

* 0.18A,

* 60V. RDS(ON) = 5 Ω @ VGS =

* 10 V

* Voltage controlled p-channel small signal switch

* High density cell design for low RDS(ON)

* High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo

NDS0605_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS0605

Manufacturer:

Fairchild

File Size:

185.04 KB

Description:

P-channel enhancement mode field effect transistor.

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NDS0605 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Fairchild

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