NDS0605 - P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching.
They can be used, wit
NDS0605 Features
* 0.18A,
* 60V. RDS(ON) = 5 Ω @ VGS =
* 10 V
* Voltage controlled p-channel small signal switch
* High density cell design for low RDS(ON)
* High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo
