NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDS331N
Manufacturer: Fairchild
File Size: 59.65 KB
Datasheet: NDS331N_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 1.3 A, 20 V. RDS(ON) = 0.21 Ω @ VGS= 2.7 V RDS(ON) = 0.16 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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