NDS352AP Datasheet - Fairchild

NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor

These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap.

NDS352AP Features

* -0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V RDS(ON) = 0.3 Ω @ VGS = -10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance an

NDS352AP_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS352AP

Manufacturer:

Fairchild

File Size:

78.57 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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NDS352AP NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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