NDS355N Datasheet - Fairchild

NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDS355N Features

* 1.6A, 30V. RDS(ON) = 0.125Ω @ VGS = 4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mou

NDS355N_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS355N

Manufacturer:

Fairchild

File Size:

74.69 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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NDS355N NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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