Datasheet4U Logo Datasheet4U.com

NDS356AP Datasheet - Fairchild

NDS356AP - P-Channel Logic Level Enhancement Mode Field Effect Transistor

SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low volta

NDS356AP Features

* -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V RDS(ON) = 0.2 Ω @ VGS=-10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

NDS356AP_FairchildSemiconductor.pdf

Preview of NDS356AP PDF
NDS356AP Datasheet Preview Page 2 NDS356AP Datasheet Preview Page 3

Datasheet Details

Part number:

NDS356AP

Manufacturer:

Fairchild

File Size:

78.75 KB

Description:

P-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

📌 All Tags