NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

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Datasheet Specifications

Part number: NDS356AP
Manufacturer: Fairchild
File Size: 78.75 KB
Datasheet: NDS356AP_FairchildSemiconductor.pdf
Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V RDS(ON) = 0.2 Ω @ VGS=-10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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