NDS356AP Datasheet - Fairchild

NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor

SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volta.

NDS356AP Features

* -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V RDS(ON) = 0.2 Ω @ VGS=-10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

NDS356AP_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS356AP

Manufacturer:

Fairchild

File Size:

78.75 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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NDS356AP NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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