NDS356AP - P-Channel Logic Level Enhancement Mode Field Effect Transistor
SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low volta
NDS356AP Features
* -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V RDS(ON) = 0.2 Ω @ VGS=-10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma
