NDS356P Datasheet - Fairchild

NDS356P, P-Channel Logic Level Enhancement Mode Field Effect Transistor

March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

datasheet Preview Page 1 from Datasheet4u.com

NDS356P_FairchildSemiconductor.pdf

NDS356P Datasheet Preview — Preview of NDS356P PDF

Datasheet Details

Part number:

NDS356P

Manufacturer:

Fairchild

File Size:

78.03 KB

Description:

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* -1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface m

NDS356P Distributors

📁 Related Datasheet

NDS355AN NDS331N NDS36P NDS02ZG-M6 NDS03ZA NDS03ZA-M6

📌 All Tags

NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

Fairchild NDS356P-like datasheet