NDS352P - P-Channel Logic Level Enhancement Mode Field Effect Transistor
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage app
NDS352P Features
* -0.85A, -20V. RDS(ON) = 0.5Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface m
