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NDS352P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS352P Features

* -0.85A, -20V. RDS(ON) = 0.5Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface m

NDS352P General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDS352P Datasheet (78.92 KB)

Preview of NDS352P PDF

Datasheet Details

Part number:

NDS352P

Manufacturer:

Fairchild

File Size:

78.92 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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