NDS355AN Datasheet - ON Semiconductor

NDS355AN, N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high.

datasheet Preview Page 1 from Datasheet4u.com

NDS355AN-ONSemiconductor.pdf

NDS355AN Datasheet Preview — Preview of NDS355AN PDF

Datasheet Details

Part number:

NDS355AN

Manufacturer:

ON Semiconductor ↗

File Size:

464.66 KB

Description:

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for

Applications

* in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package. 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SO

NDS355AN Distributors

📁 Related Datasheet

NDS355N NDS351AN NDS351N NDS352AP NDS352P NDS356AP

📌 All Tags

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor ON Semiconductor

ON Semiconductor NDS355AN-like datasheet