NDS7002A - N-Channel MOSFET
These N *channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on *state resistance while providing rugged, reliable, and fast switching performance.
These products ar
NDS7002A Features
* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD Protection Level: HBM > 100 V, CDM > 2 kV
* This Device is Pb
* Free and Halogen Free DATA SHEET www.onsemi.com D G S 1
