NDS0610 Datasheet (ON Semiconductor) - P-Channel Enhancement Mode Field Effect Transistor

NDS0610, P-Channel Enhancement Mode Field Effect Transistor

This P *Channel Enhancement Mode Field Effect Transistors are Produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on *state resistance, provide rugged and reliable performance and fast switching.

They can

NDS0610 Features

* 0.12 A,

* 60 V

* RDS(on) = 10 W @ VGS =

* 10 V

* RDS(on) = 20 W @ VGS =

* 4.5 V

* Voltage Controlled P

* Channel Small Signal Switch

* High Density Cell design for Low RDS(on)

* High Saturation Current ABSOLUTE MA