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NDS7000A, NDS7002A Datasheet - National Semiconductor

NDS7000A - N-Channel MOSFET

These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum

NDS7000A Features

* Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378

* 2 TL G 11378

* 1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378

* 3 Absolute Maximum Ratin

NDS7002A_NationalSemiconductor.pdf

This datasheet PDF includes multiple part numbers: NDS7000A, NDS7002A. Please refer to the document for exact specifications by model.
NDS7000A Datasheet Preview Page 2 NDS7000A Datasheet Preview Page 3

Datasheet Details

Part number:

NDS7000A, NDS7002A

Manufacturer:

National Semiconductor

File Size:

223.79 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: NDS7000A, NDS7002A.
Please refer to the document for exact specifications by model.

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