Description
These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage low current applications such as small servo motor
Features
- Y Y Y Y Y
Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON)
TL G 11378.
- 2 TL G 11378.
- 1
TO-92 7000 Series
TO-236 AB (SOT-23) 7002 Series
TL G 11378.
- 3
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL.
