NDS7000A - N-Channel MOSFET
These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum
NDS7000A Features
* Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378
* 2 TL G 11378
* 1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378
* 3 Absolute Maximum Ratin
