NDS7000A Datasheet - National Semiconductor

NDS7000A N-Channel MOSFET

These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum.

NDS7000A Features

* Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378

* 2 TL G 11378

* 1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378

* 3 Absolute Maximum Ratin

NDS7000A Datasheet (223.79 KB)