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NDSH10120C-F155 Datasheet - ON Semiconductor

NDSH10120C-F155 SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH10120C-F155 Features

* Max Junction Temperature 175C

* Avalanche Rated 49 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* These Devices are Halogen Free/BFR Free and are RoHS Compliant Applications

NDSH10120C-F155-ONSemiconductor.pdf

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Datasheet Details

Part number:

NDSH10120C-F155

Manufacturer:

ON Semiconductor ↗

File Size:

288.85 KB

Description:

Sic schottky diode.

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