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NDSH10120C-F155 SiC Schottky Diode

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode * EliteSiC, 10 A, 1200 V, D3, TO-247-2L NDSH10120C-F155 1.Cathode 2.Anode S.
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits 1 2 TO
* 247
* 2LD CASE 340DC MARKING DIAGRAM DSH 10120C AYWWZZ DSH10120C A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See detailed

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SiC Schottky Diode ON Semiconductor
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