NDSH40120CDN

Silicon Carbide Schottky Diode

ON Semiconductor

NDSH40120CDN Features

* Max Junction Temperature 175C

* Avalanche Rated 166 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery

* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb

* Free

NDSH40120CDN General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

NDSH40120CDN Datasheet (285.18 KB)

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NDSH40120CDN

Manufacturer:

ON Semiconductor ↗

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285.18 KB

Description:

Silicon carbide schottky diode.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode

* EliteSiC, 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN Schottky Diode Descript.

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NDSH40120CDN Silicon Carbide Schottky Diode ON Semiconductor

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