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NDSH40120CDN Silicon Carbide Schottky Diode

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode * EliteSiC, 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN Schottky Diode Descript.
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175C
* Avalanche Rated 166 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits 1 23 TO
* 247
* 3LD CASE 340CX MARKING DIAGRAM DSH40 120CDN AYWWZZ DSH40120CDN A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See deta

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