NDS335N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

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Datasheet Details

Part number: NDS335N
Manufacturer: Fairchild
File Size: 59.51 KB
Datasheet: NDS335N_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS335N Product details

Description

These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology..

Features

1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source.

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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