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NDS335N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS335N Features

* 1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

NDS335N General Description

These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap.

NDS335N Datasheet (59.51 KB)

Preview of NDS335N PDF

Datasheet Details

Part number:

NDS335N

Manufacturer:

Fairchild

File Size:

59.51 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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