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NDS336P Datasheet - Fairchild

NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volt.

NDS336P Features

* -1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V RDS(ON) = 0.2 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design

NDS336P_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS336P

Manufacturer:

Fairchild

File Size:

77.51 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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NDS336P NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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