NDS9407 Datasheet - Fairchild

NDS9407 Single P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul.

NDS9407 Features

* -3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V R DS(ON) = 0.24Ω @ VGS =-4.5V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________

NDS9407_FairchildSemiconductor.pdf