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NDS9407 - Single P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • -3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V R DS(ON) = 0.24Ω @ VGS =-4.5V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C TA = 70°C TA =.

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Datasheet Details

Part number NDS9407
Manufacturer Fairchild
File Size 325.78 KB
Description Single P-Channel MOSFET
Datasheet download datasheet NDS9407 Datasheet
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Full PDF Text Transcription

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June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V R DS(ON) = 0.24Ω @ VGS =-4.5V.
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