NDS9400A - Single P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul
NDS9400A Features
* -3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Rugged and reliable. ________________________________________________________________________________ 5 6 4 3 7 8 2 1
