NDS9400A Datasheet - Fairchild

NDS9400A Single P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul.

NDS9400A Features

* -3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Rugged and reliable. ________________________________________________________________________________ 5 6 4 3 7 8 2 1

NDS9400A_FairchildSemiconductor.pdf