NDS9400A - Single P-Channel MOSFET

Fairchild

Datasheet Details

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Rugged and reliable. ________________________________________________________________________________ 5 6 4 3 7 8 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A= 25°C unless otherwise noted ND.

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