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NDS9430A - Single P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Features

  • -5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C un.

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Datasheet Details

Part number NDS9430A
Manufacturer Fairchild
File Size 66.16 KB
Description Single P-Channel MOSFET
Datasheet download datasheet NDS9430A Datasheet
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Full PDF Text Transcription

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December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V.
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