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NDS9410S - Single N-channel MOSFET

Datasheet Summary

Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • 7.0 A, 30 V. RDS(ON) = 0.03 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1.

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Datasheet Details

Part number NDS9410S
Manufacturer Fairchild
File Size 329.49 KB
Description Single N-channel MOSFET
Datasheet download datasheet NDS9410S Datasheet
Additional preview pages of the NDS9410S datasheet.

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Full PDF Text Transcription

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February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 7.0 A, 30 V. RDS(ON) = 0.03 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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