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NDS9410A - Single N-channel MOSFET

Datasheet Summary

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

  • 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 42 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (No.

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Datasheet Details

Part number NDS9410A
Manufacturer Fairchild
File Size 230.94 KB
Description Single N-channel MOSFET
Datasheet download datasheet NDS9410A Datasheet
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Full PDF Text Transcription

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NDS9410A April 2000 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. Features • 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 42 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package.
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