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NDS9405 - single P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Features

  • -4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________ 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C Maximu.

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Datasheet Details

Part number NDS9405
Manufacturer ETC
File Size 72.10 KB
Description single P-Channel MOSFET
Datasheet download datasheet NDS9405 Datasheet
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    N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor February 1996 General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -4.3A, -20V. RDS(ON) = 0.
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