NDS9405 - single P-Channel MOSFET

Datasheet Details

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________ 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C Maximu.

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