NE2 Datasheet | Specifications & PDF Download

BSC010NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V

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BSZ011NE2LS5I MOSFET OptiMOSTM5 Power-Transistor, 25 V Features • Optimized for high performance buck converters • Monolithic integrated Schottky-lik

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BSZ010NE2LS5 MOSFET OptiMOSTM 5 Power-Transistor, 25 V Features • Optimized for high performance buck converters • Very low on-resistance RDS(on) @ V

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IQE006NE2LM5CG MOSFET OptiMOSTM 5 Power-Transistor, 25 V Features • Very low on-resistance RDS(on) • 100% avalanche tested • Superior thermal resista

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WLCSP22 GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) 14 March 2025 Prod

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NICHIA STS-DA1-4201A NICHIA CORPORATION SPECIFICATIONS FOR GREEN LED NE2G757GT ● Pb-free Reflow Soldering Application ● Built-in ESD P

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BSC024NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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NICHIA STS-DA1-4198 NICHIA CORPORATION SPECIFICATIONS FOR BLUE LED NE2B757GT ● Pb-free Reflow Soldering Application ● Built-in ESD Pro

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GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER I

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SITNE24V2BNQ 2-Line, Bi-directional, Transient Voltage Suppressors FEATURES ➢ Reverse stand-off voltage: 24V Max. ➢ Transient protection for each l

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PNE20060CPE-Q 200 V, 2 x 3 A dual common cathode hyperfast recovery rectifier 15 July 2024 Product data sheet 1. General description High power d

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GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP

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BSC009NE2LS5 MOSFET OptiMOSTM 5 Power-MOSFET, 25 V Features • Optimized for high performance buck converters • Very low on-resistance RDS(on) @ VGS=4

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF Data Sheet Rev. 2.1 Final Power Manage

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Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi

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Features  N-Channel，3.3V Logic Level Control  Low RDS(on) and High Efficiency  Fast Switching  Enhancement mode  100% Avalanche test  Pb-free le

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