NE2 Datasheet | Specifications & PDF Download

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for

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BSC010NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V

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Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi

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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB

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NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator ap

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NICHIA STS-DA1-4201A NICHIA CORPORATION SPECIFICATIONS FOR GREEN LED NE2G757GT ● Pb-free Reflow Soldering Application ● Built-in ESD P

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NICHIA STS-DA1-4198 NICHIA CORPORATION SPECIFICATIONS FOR BLUE LED NE2B757GT ● Pb-free Reflow Soldering Application ● Built-in ESD Pro

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