locate, communicate, accelerate NEO-6 u-blox 6 GP.
u-blox
NEO-6M - 6 GPS Modules
locate, communicate, accelerate NEO-6 u-blox 6 GPS Modules Data Sheet Abstract Technical data sheet describing the cost effective, high-performance .
Infineon
IDC40D120T6M - Diode
IDC40D120T6M Diode EMCON 4 Medium Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • low / medium powe.
Infineon
AIMBG75R016M1H - MOSFET
AIMBG75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In.
Infineon
S26KL256S - 256Mb (32MB) HYPER FLASH
S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB)/256 Mb (32 MB)/ 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V/1.8.
Infineon
IMZA75R016M1H - MOSFET
IMZA75R016M1H MOSFET CoolSiCª Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in mo.
Infineon
IMBG120R026M2H - 1200V SiC MOSFET
IMBG120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Infineon
IMBG40R036M2H - 400V MOSFET
Public IMBG40R036M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • .
Infineon Technologies AG
HYB25L256160AF - 256MBit Mobile-RAM
www.DataSheet4U.com Data Sheet, Rev. 1.2, April 2004 HYB25L256160AF HYE25L256160AF 256MBit Mobi le- RAM Mobile-RAM Commercial Temperature Range E x.
Infineon
AUIRF7736M2TR - Power MOSFET
AUTOMOTIVE GRADE AUIRF7736M2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Ex.
Infineon
HYE18P16161AC - 16M Asynchronous/Page CellularRAM
D a t a Sh e e t , V 2. 0 , D e c e m b e r 2 0 0 3 H Y E 1 8 P 1 6 1 6 1 A C - 7 0 /L 7 0 H Y E 1 8 P 1 6 1 6 1 A C - 8 5 /L 8 5 1 6 M As yn c h r .
Infineon
HYE18P16161ACL85 - 16M Asynchronous/Page CellularRAM
D a t a Sh e e t , V 2. 0 , D e c e m b e r 2 0 0 3 H Y E 1 8 P 1 6 1 6 1 A C - 7 0 /L 7 0 H Y E 1 8 P 1 6 1 6 1 A C - 8 5 /L 8 5 1 6 M As yn c h r .
Infineon
HYS64V16302GU-7-D - 3.3 V 16M 64-Bit/ 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
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Infineon
HYS64V32220GU-7-C2 - 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
168 pin unbuffered DIMM Modules • • • • • • • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications PC100 & PC133 ver.
Infineon
HYS64V32300GU-75-C2 - 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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Infineon
HYS64V32300GU-75-D - 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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Infineon
HYS72V32300GU-75-D - 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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Infineon
HYS72V32300GU-8-C2 - 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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Infineon
HYS64V32300GU - 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Lin.
Infineon Technologies Corporation
HYB25DC256800C - (HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
www.DataSheet4U.com Data Sheet, Rev. 1.30, Nov. 2005 HYB25DC256160C[E/F/T] HYB25DC256800C[E/F] 256 Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compl.