NEO-6M Datasheet | Specifications & PDF Download

locate, communicate, accelerate NEO-6 u-blox 6 GPS Modules Data Sheet Abstract Technical data sheet describing the cost effective, high-performance

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Public IMT65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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AIMDQ75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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SP005631230 BGSA406MN10 Ultra high RF voltage antenna tuning switch Features • Low RON resistance of 2.0 Ω at each port in ON state • Low COFF capacit

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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S70GL02GS 2 Gbit (256 MB) GL-S MIRRORBIT™ Flash Parallel, 3.0 V General description The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated o

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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S25FL128S, S25FL256S 128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash SPI Multi-I/O, 3.0V Features • CMOS 3.0 V core with versatile I/O • SPI with multi-I/O -

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Technische Information / Technical Information IGBT-Module IGBT-modules FD600R06ME3_S2 EconoDUAL™3 Modul mit Trench/Feldstopp IGBT3 und Emitter Con

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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IMZA75R016M1H MOSFET CoolSiCª Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in mo

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D at a S heet , V 1. 0, O c t . 20 0 1 C167CS-L16M3V Low Power 1 6 -B it S in g l e -C h i p M i c r o c o n t ro l l e r M i c r o c o n t ro l le

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IDC40D120T6M Diode EMCON 4 Medium Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • low / medium powe

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IMDQ75R016M1H MOSFET CoolSiCª Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed i

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S25FS128S, S25FS256S 128 Mb (16 MB) / 256 Mb (32 MB) FS-S Flash SPI Multi-I/O, 1.8 V Features • Density - S25FS128S - 128 Mbits (16 MB) - S25FS256S -

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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Public IMBG40R036M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification •

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  AUTOMOTIVE GRADE AUIRF7736M2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Ex

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Datasheet, Rev.1.11, April 2005 www.DataSheet4U.com HYB25D256163CE-4.0 HYB25D256163CE-5.0 HYB25D256163CE-6.0 16M x 16 Double Data Rate Graphics DRAM

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AIMBG75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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