2ED2110S06M 650V high-side and low-side gate driver

Infineon

Description

2ED2181 (4) S06F 2ED2110S06M 650 V high-side and low-side gate driver with integrated bootstrap diode .
The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

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Datasheet Specifications

Part number: 2ED2110S06M
Manufacturer: Infineon ↗
File Size: 1.28 MB
Datasheet: 2ED2110S06M-Infineon.pdf
Description: 650V high-side and low-side gate driver

Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) up to + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V

Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
* Refrigeration compressors, induction cookers, ot

2ED2110S06M Distributors

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2ED2110S06M 650V high-side and low-side gate driver Infineon

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