2ED2110S06M Datasheet - Infineon

2ED2110S06M 650V high-side and low-side gate driver

The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to.

2ED2110S06M Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) up to + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

2ED2110S06M-Infineon.pdf