2ED2110S06M - 650V high-side and low-side gate driver
The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to
2ED2110S06M Features
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) up to + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
