NJW0302 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor INCHANGE Semiconductor NJW0302 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min) ·Good L

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·Complement to

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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NJW0302G Rev.F Mar.-2016 DATA SHEET / Descriptions TO-3P PNP 。Silicon PNP transistor in a TO-3P Plastic Package.  / Features 100W ， NJW0281G

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