NTE331 (NPN) & NTE332 (PNP) Silicon Complementary .
NTE
NTE3311 - Insulated Gate Bipolar Transistor
NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.
NTE
NTE331 - Silicon Complementary Transistors
NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epita.
NTE
NTE3310 - Insulated Gate Bipolar Transistor
NTE3310 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.
NTE
NTE3312 - Insulated Gate Bipolar Transistor
NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.
