ON Semiconducto Datasheet | Specifications & PDF Download

MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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Green Mode Power Switch FSDH321, FSDL321 Description Each product in the FSDx321 (x for H, L) family consists of an integrated Pulse Width Modulator

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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www.fairchildsemi.com FSDM0565R Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operat

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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HT73xx Series Low Power Consumption LDO Features • Ultra low quiescent current: 3.5µA (typ.) • High input voltage (up to 12V) • Output voltage: 1.8V,

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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Micrel, Inc. QUINT EXCLUSIVE OR/NOR GATE SY100S307 SY100S307 FEATURES DESCRIPTION ■ Max. propagation delay of 1000ps ■ IEE min. of –58mA ■ Ext

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CZTA14 NPN CZTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICO

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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SSF3338 www.DataSheet4U.com DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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