NJD2873 (ON Semiconductor)
Power Transistors
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
(38 views)
NJD1718 (ON Semiconductor)
Power Transistors
NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching appl
(36 views)
NJD2873 (Inchange Semiconductor)
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
NJD2873
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current
(36 views)
NJVNJD2873 (ON Semiconductor)
Power Transistors
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
(36 views)
NJD2873T4 (ON Semiconductor)
Power Transistor
www.DataSheet4U.com
NJD2873T4 Plastic Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applic
(32 views)
NJVNJD35N04G (ON Semiconductor)
NPN Darlington Power Transistor
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor
This high voltage power Darlington has been specifically designed for inductiv
(32 views)
NJD35N04G (On Semiconductor)
NPN Power Transistor
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
NPN Darlington Power Transistor
This high voltage power Darlington has been specifically designed for induct
(32 views)
NJVNJD2873T4G (ON Semiconductor)
Power Transistors
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
(31 views)
NJVNJD35N04T4G (ON Semiconductor)
NPN Darlington Power Transistor
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor
This high voltage power Darlington has been specifically designed for inductiv
(30 views)
NJVNJD1718 (ON Semiconductor)
Power Transistors
NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching appl
(29 views)
NJD1718 (Inchange Semiconductor)
Silicon PNP Power Transistor
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching
(28 views)
