P18N50 Datasheet | Specifications & PDF Download

FDP18N50 / FDPF18N50 500V N-Channel MOSFET April 2007 FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

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Feb 2009 PFP18N50/PFF18N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰

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MDP18N50 N-channel MOSFET 500V MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP18N50 uses advanced Magnachip’s MOSFET Techn

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Feb 2009 PFP18N50 / PFF18N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP/F18N50B uses advan

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TSP18N50M/TSF18N50M TSP18N50M/TSF18N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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MOSFET – N-Channel, UniFETt 500 V, 18 A, 265 mW FDP18N50 / FDPF18N50 / FDPF18N50T Description UniFET MOSFET is onsemi's high voltage MOSFET family bas

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Advanced Power Electronics Corp. AP18N50W-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Require

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP18N50 SDF18N50 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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HFP18N50U HFP18N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ V

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SLP18N50C / SLF18N50C SLP18N50C / SLF18N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Novemb

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www.vishay.com SiHP18N50C Vishay Siliconix Power MOSFET TO-220AB D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Q

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Advanced Power Electronics Corp. AP18N50W RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirem

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FQP18N50V2/FQPF18N50V2 QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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