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SLP18N50C

N-Channel MOSFET

SLP18N50C Features

* - 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP18N50C SLF18N50C V

SLP18N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP18N50C Datasheet (1.31 MB)

Preview of SLP18N50C PDF

Datasheet Details

Part number:

SLP18N50C

Manufacturer:

Maple Semiconductor

File Size:

1.31 MB

Description:

N-channel mosfet.

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TAGS

SLP18N50C N-Channel MOSFET Maple Semiconductor

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