TSP18N50M

N-Channel MOSFET

Truesemi

TSP18N50M Features

* 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V

* Low gate charge(typical 50nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSP18N50M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP18N50M Datasheet (636.81 KB)