TSP12N60MS - N-Channel MOSFET
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs
TSP12N60MS Features
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.4Ω
* Ultra Low Gate Charge (typ. Qg = 30nC)
* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti
