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TSP12N60MS

N-Channel MOSFET

TSP12N60MS Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.4Ω

* Ultra Low Gate Charge (typ. Qg = 30nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSP12N60MS General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSP12N60MS Datasheet (913.68 KB)

Preview of TSP12N60MS PDF

Datasheet Details

Part number:

TSP12N60MS

Manufacturer:

Truesemi

File Size:

913.68 KB

Description:

N-channel mosfet.

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TSP12N60MS N-Channel MOSFET Truesemi

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