TSP12N60MS - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSP12N60MS
Manufacturer: Truesemi
File Size: 913.68 KB
Datasheet: TSP12N60MS-Truesemi.pdf
Description: N-Channel MOSFET

TSP12N60MS Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.4Ω.
Ultra Low Gate Charge (typ. Qg = 30nC).
100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avala.

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N-Channel MOSFET Truesemi

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